学习经历
2000.9—2007.7 武汉大学电子信息学院通信与信息系统专业
1996.9—2000.7 武汉科技大学信息科学与工程学院
任职经历
2016.1-至今 武汉大学电子信息学院
2013.11—2014.12 美国加州大学洛杉矶分校（UCLA）电气工程系，新型半导体器件设计实验室及UCLA清洁能源研究中心作访问学者，从事新型半导体光电器件的模型建立和仿真工作
2005.7-2016.1 武汉大学微电子与信息技术研究院
社会兼职
现担任《Optics & Laser Technology》、《Journal of Lightwave Technology》《Optical and Quantum Electronics》《Proc. of SPIE》、《Advances in Optics》《西安电子科技大学学报》等杂志审稿人，国际计算机科学与信息技术协会（IACSIT）高级会员，IEEE会员。
研究方向
1.新型半导体光电器件物理建模与优化设计研究
2.集成电路互连线及器件模型和优化设计研究
3.物联网无线网络系统设计及研发
学术成果
1.Qi Chang; Shi, Xinzhi; Ye, Shangli; Wang, Gaofeng, “Equivalent circuit-level model of quantum cascade lasers influence of doping density on steady state and dynamic responses” Quantum Electronics, Vol.49, No.6, pp.545-552,2013. (SCI 2区)
2.Qi Chang; Shi, Xinzhi; Wang, Gaofeng,“High-order circuit-level thermal model of vertical-cavity surface-emitting lasers”, IET Optoelectronics, Vol.5,No.1, pp. 19-27,2011. (SCI)
3.Min Zhai; Shuangli Ye*; Feng Liu; Chang Qi; Xinzhi Shi; Gaofeng Wang, “Influences of Co doping effect on the structural properties of single graphene film”, J Nanoscience Nanotechnology, 16(1):1018-1021,2016 (SCI 3区).
4.Jiang Sun;Jun Qian; Min Zhai;Feng Liu,Chang Qi; Xinzhi Shi; Gaofeng Wang Shuangli Ye*, “Nitrogen-tuned transition metal Co adatom embedded graphene”, Chemical Physics Letters 638(1):47-51,2015 (SCI 3区)
5.Zhicong Xiang；Jun Qian，Yanzhou Zhou，Feng Liu，Chang Qi，Xinzhi Shi，Gaofeng Wang Shuangli Ye* “Synthesis ofquasi-core–shell Co-dopedZnO/graphenenanoparticles”, Material Letters 161:286-288,2015 (SCI 3区)
6.M. Zhai; S. Ye*; Z. Xia; F. Liu; C. Qi; X. Shi; G. Wang, “Local latttice distortion effect on the magnetic ordering of the Heusler alloy Co2FeAl0.5Si0.5 film”, J.Superconductivity: Incorporating Novel Magnetism, vol.27, , 2014.DOI: 10.1007/s10948-014-2526-z. (SCI 3区)
7.Ye, Shuangli; Huang, Honghua; Yuan, Cailei; Liu, Feng; Zhai, Min; Shi, Xinzhi; Qi, Chang; Wang, Gaofeng, "Thickness-Dependent Strain Effect on the Deformation of the Graphene-Encapsulated Au Nanoparticles," Journal of Nanomaterials, vol. 2014, Article ID 989672, 6 pages, 2014. doi:10.1155/2014/989672. (SCI 3区)
8.Shi, Xinzhi; Qi Chang*; Wang, Gaofeng; Hu Jicheng and Liu Feng, “Multimode VCSEL Thermal and Spatial Model,” Przeglad elektrotechniczny . Vols. 88, pp. 248-251, 2012. (SCI)
9.祁昶，艾勇，石新智，叶双莉, “注入区势垒厚度对THz量子级联激光器光电特性的影响”， 光电子·激光，26(12):2261-2266, 2015（EI）
10.祁昶，艾勇，石新智，叶双莉，江金光, “基于多模速率方程电路建模的太赫兹量子级联激光器稳态性能及输出光谱特性分析”， 光电子·激光，26(4):617-622, 2015（EI）
11.祁昶，石新智，叶双莉，江金光，“THz量子级联激光器跃迁速率的数值求解及验证”，光电子·激光，24(12):2283-2288, 2013（EI）
12.祁昶，石新智，叶双莉，江金光，“基于电路建模的THz量子级联激光器稳态性能分析”，光电子·激光，24(11):2106-2110, 2013（EI）
13.夏校军，祁昶*，石新智，江金光， “一种中红外量子级联激光器的热模型”，光电子·激光，24(7):1263-1267, 2013（EI）
14.Shi, Xinzhi; Qi Chang*; Wang, Gaofeng; Hu Jicheng and Liu Feng, “Modeling and Simulation of VCSEL’s Turn on Delay Based on Rate Equations,” Applied Mechanics and Materials. Vols.110-116, pp. 3364-3370, 2012. (EI)
15.张鹏程，祁昶*，江先阳，王高峰, “量子级联激光器的一种新电路模型”，光电子·激光，22(9):1313-1316, 2011（EI）
16.Qi Chang; Shi, Xinzhi; Ye, Shangli, “Optical Spectra Simulation for Terahertz Quantum Cascade Lasers based on a Circuit-Level Model”, 2017 IEEE International Conference on Circuits, Devices and Systems (ICCDS), Sep. 2017, Chengdu, China. (EI)
17.Qi Chang; Shi, Xinzhi; Ye, Shangli; Wang, Gaofeng, “Circuit model of quantum Cascade laser for simulation of influence of doping density”, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Jun. 2013, Hongkong. (EI)
18.Qi Chang; Xia, Xiaojun; Shi, Xinzhi; Ye, Shangli, “Circuit-level thermal model of intermediate infrared quantum cascade lasers”, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Jun. 2013, Hongkong. (EI)
19.Qi Chang; Shi，Xinzhi; Wang, Gaofeng, “ Thermal circuit model of MQW VCSEL Laser”, Proceedings of International Conference on Microwave and Millimeter Wave Technology, 2010(ICMMT), vol.3, 1028-1032, 2010 (EI）
20.Qi Chang; Shi, Xinzhi; Wang, Gaofeng, “A new circuit model of multi-quantum well vertical-cavity surface-emitting lasers,” Proceeding of 3rd International Nanoelectronics Conference, 2010(INEC), Vol.4, 1949-1950, Jan. 2010. (EI)
21.Shi, Xinzhi; Qi Chang; Wang, Gaofeng, “Multimode rate-equation-based VCSEL thermal and spatial model of circuit level,” Proceeding of 3rd International Nanoelectronics Conference, 2010(INEC), Vol.4, 1997-1998, Jan. 2010. (EI)
来源：百度百科
